JPS5124341B2 - - Google Patents

Info

Publication number
JPS5124341B2
JPS5124341B2 JP46104633A JP10463371A JPS5124341B2 JP S5124341 B2 JPS5124341 B2 JP S5124341B2 JP 46104633 A JP46104633 A JP 46104633A JP 10463371 A JP10463371 A JP 10463371A JP S5124341 B2 JPS5124341 B2 JP S5124341B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP46104633A
Other languages
Japanese (ja)
Other versions
JPS4871190A (en]
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP46104633A priority Critical patent/JPS5124341B2/ja
Priority to US00317295A priority patent/US3806778A/en
Priority to DE2263149A priority patent/DE2263149C3/de
Publication of JPS4871190A publication Critical patent/JPS4871190A/ja
Publication of JPS5124341B2 publication Critical patent/JPS5124341B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP46104633A 1971-12-24 1971-12-24 Expired JPS5124341B2 (en])

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP46104633A JPS5124341B2 (en]) 1971-12-24 1971-12-24
US00317295A US3806778A (en) 1971-12-24 1972-12-21 Insulated-gate field effect semiconductor device having low and stable gate threshold voltage
DE2263149A DE2263149C3 (de) 1971-12-24 1972-12-22 Isolierschicht-Feldeffekttransistor und Verfahren zu seiner Herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46104633A JPS5124341B2 (en]) 1971-12-24 1971-12-24

Publications (2)

Publication Number Publication Date
JPS4871190A JPS4871190A (en]) 1973-09-26
JPS5124341B2 true JPS5124341B2 (en]) 1976-07-23

Family

ID=14385834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46104633A Expired JPS5124341B2 (en]) 1971-12-24 1971-12-24

Country Status (3)

Country Link
US (1) US3806778A (en])
JP (1) JPS5124341B2 (en])
DE (1) DE2263149C3 (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS535438U (en]) * 1976-07-01 1978-01-18

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3437863B2 (ja) * 1993-01-18 2003-08-18 株式会社半導体エネルギー研究所 Ｍｉｓ型半導体装置の作製方法
US4027321A (en) * 1973-05-03 1977-05-31 Ibm Corporation Reliable MOSFET device and method for making same
US3971710A (en) * 1974-11-29 1976-07-27 Ibm Anodized articles and process of preparing same
US4107726A (en) * 1977-01-03 1978-08-15 Raytheon Company Multilayer interconnected structure for semiconductor integrated circuit
US4307132A (en) * 1977-12-27 1981-12-22 International Business Machines Corp. Method for fabricating a contact on a semiconductor substrate by depositing an aluminum oxide diffusion barrier layer
US4214256A (en) * 1978-09-08 1980-07-22 International Business Machines Corporation Tantalum semiconductor contacts and method for fabricating same
US4381215A (en) * 1980-05-27 1983-04-26 Burroughs Corporation Method of fabricating a misaligned, composite electrical contact on a semiconductor substrate
US4758528A (en) * 1980-07-08 1988-07-19 International Business Machines Corporation Self-aligned metal process for integrated circuit metallization
US4608589A (en) * 1980-07-08 1986-08-26 International Business Machines Corporation Self-aligned metal structure for integrated circuits
US4524378A (en) * 1980-08-04 1985-06-18 Hughes Aircraft Company Anodizable metallic contacts to mercury cadmium telleride
DE3277759D1 (en) * 1981-09-18 1988-01-07 Fujitsu Ltd Semiconductor device having new conductive interconnection structure and method for manufacturing the same
DE3229205A1 (de) * 1982-08-05 1984-02-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiterbauelement und ein verfahren zu dessen herstellung
US6713783B1 (en) 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors
JP2873632B2 (ja) 1991-03-15 1999-03-24 株式会社半導体エネルギー研究所 半導体装置
US5747355A (en) * 1993-03-30 1998-05-05 Semiconductor Energy Laboratory Co., Ltd. Method for producing a transistor using anodic oxidation
TW297142B (en]) * 1993-09-20 1997-02-01 Handotai Energy Kenkyusho Kk
US6777763B1 (en) 1993-10-01 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
JP3030368B2 (ja) 1993-10-01 2000-04-10 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US5576231A (en) * 1993-11-05 1996-11-19 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating an insulated gate field effect transistor with an anodic oxidized gate electrode
JP3402400B2 (ja) * 1994-04-22 2003-05-06 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
US6747627B1 (en) 1994-04-22 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Redundancy shift register circuit for driver circuit in active matrix type liquid crystal display device
US6370502B1 (en) * 1999-05-27 2002-04-09 America Online, Inc. Method and system for reduction of quantization-induced block-discontinuities and general purpose audio codec
TWI436474B (zh) * 2007-05-07 2014-05-01 Sony Corp A solid-state image pickup apparatus, a manufacturing method thereof, and an image pickup apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3489656A (en) * 1964-11-09 1970-01-13 Western Electric Co Method of producing an integrated circuit containing multilayer tantalum compounds
US3502950A (en) * 1967-06-20 1970-03-24 Bell Telephone Labor Inc Gate structure for insulated gate field effect transistor
FR1572934A (en]) * 1967-10-09 1969-06-27
DE1812455C3 (de) * 1968-12-03 1980-03-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen einer aus einem Metalloxyd bestehenden isolierenden Schutzschicht an der Oberfläche eines Halbleiterkristalls
US3672984A (en) * 1969-03-12 1972-06-27 Hitachi Ltd Method of forming the electrode of a semiconductor device
DE1923265B2 (de) * 1969-05-07 1972-06-22 Licentia Patent Verwaltungs GmbH, 6000 Frankfurt Verfahren zum herstellen eines feldeffekttransistors mit isolierter steuerelektrode
US3663279A (en) * 1969-11-19 1972-05-16 Bell Telephone Labor Inc Passivated semiconductor devices
FR2081249A1 (en) * 1970-03-23 1971-12-03 Sescosem Junction field effect transistors - using tantlum oxide dielectric and needing fewer masks

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS535438U (en]) * 1976-07-01 1978-01-18

Also Published As

Publication number Publication date
DE2263149B2 (de) 1978-06-08
DE2263149A1 (de) 1973-07-19
DE2263149C3 (de) 1984-08-09
US3806778A (en) 1974-04-23
JPS4871190A (en]) 1973-09-26

Similar Documents

Publication Publication Date Title
JPS5124341B2 (en])
AU2658571A (en])
AU2691671A (en])
AU3005371A (en])
AU2564071A (en])
AU2684071A (en])
AU2726271A (en])
AU2742671A (en])
AU2894671A (en])
AU2941471A (en])
AU2952271A (en])
AU2930871A (en])
AU2854371A (en])
AU2503871A (en])
AU2885171A (en])
AU3038671A (en])
AU3025871A (en])
AU2588771A (en])
AU2963771A (en])
AU2654071A (en])
AU2669471A (en])
AU2940971A (en])
AU2938071A (en])
AU2684171A (en])
AU2927871A (en])